| 000 | 00589cam a2200193ua 4500 | ||
|---|---|---|---|
| 999 |
_c33783 _d33783 |
||
| 005 | 20240626133416.0 | ||
| 008 | 100315s2008 NY a g b000 u eng u | ||
| 020 |
_a9788181288554 _cRS 495.00 |
||
| 040 | _aMAIN | ||
| 082 | 1 | 4 |
_a620.5 _bLUN/N |
| 100 | 1 | _aLundstrom, Mark S. | |
| 245 | 1 | 0 |
_aNanoscale transistors : device physics, modeling and simulation / _cMark S Lundstrom and Jing Guo. |
| 250 | _a / | ||
| 260 |
_aNew Delhi : _bSpringer (India) , _c2008. |
||
| 300 |
_avi,217p. : _bills.,figures ; _c23cm . |
||
| 653 | 0 | _aDEVICE-PHYSICS | |
| 700 | 1 | _aGuo, Jing . | |
| 942 | _cBK | ||