000 | 00884nam a22002414a 4500 | ||
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999 |
_c28638 _d28638 |
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005 | 20200311121016.0 | ||
008 | 090805s2006 ii a grm a000 u eng | | ||
040 | _aMAIN | ||
041 | 0 | _aEnglish | |
082 | 0 |
_a537.622 _bBER/S |
|
100 | 1 | _aBera, Milan Kumar | |
245 | 1 | 0 |
_aStudies on high-k gate dielectrics on strained-si for heterostructure MOSFET applications / _cresearched by Milan Kumar Bera; guided by Satyajit Saha and Chinmay K. Maiti. |
260 | 3 |
_aMidnapore : _bVidyasagar University, _c2006. |
|
300 |
_axviii,188p.+ 4 : _bfigs.,tables ; _c25cm |
||
500 | _aDocuments represents Ph.D Thesis | ||
653 | 0 | 0 | _aSEMICONDUCTORS |
653 | 0 | 0 | _aDIELECTRICS |
653 | 0 | _aMETAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MOSFTE) | |
700 | 1 | _aSaha, Satyajit | |
700 | 1 | _aMaiti, Chinmay K. | |
710 | 2 |
_aVidyasagar University. _bDepartment of Physics. |
|
942 | _cTH |